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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT PNP Switching Transistor
VOLTAGE 32 Volts
APPLICATION
* Telephone and proferssional communction equipment. * Other switching applications.
2SB1197KPT
CURRENT 0.8 Ampere
FEATURE
* Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1000mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch.
SOT-23
.041 (1.05) .033 (0.85)
(1)
.110 (2.80) .082 (2.10)
.066 (1.70)
.119 (3.04)
(3)
CONSTRUCTION
* PNP Switching Transistor
(2)
MARKING
* PN @hFE as Q Grade * RC @hFE as R Grade
.055 (1.40) .047 (1.20)
.103 (2.64) .086 (2.20)
.028 (0.70) .020 (0.50)
.007 (0.177)
.018 (0.30) .002 (0.05)
CIRCUIT
(1)B
C
(3)
.045 (1.15) .033 (0.85)
E
(2)
.019 (0.50)
Dimensions in inches and (millimeters)
SOT-23
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board.
2003-5
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
CONDITIONS open emitter open base open collector - - - - - - Tamb 25 C; note 1 -
MIN.
MAX. -40 -32 -5 -0.8 -1.0 -80 300 +150 150 +150 V V V A A
UNIT
mA mW C C C
-65 - -65
RATING CHARACTERISTIC CURVES ( 2SB1197KPT )
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 UNIT K/W
CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL BVCBO BVCEO BV EBO ICBO IEBO hFE VCEsat Cc fT PARAMETER CONDITIONS MIN. -40 -32 -5 - - 120 - 12Typ. 50 - - - -500 -500 390 -500 30 200Typ. MAX. V V V nA nA UNIT
collector-base breakdown voltage IE = 0; IC =-50 uA collector-emitter breakdown voltage IB = 0; IC =-1 mA emitter-base breakdown voltage collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency IC = 0; IE =-50 uA IE = 0; VCB = - 20 V IC = 0; VEB = - 4 V VCE = -3V; note 1 IC = -100 mA IC = -500 mA, IB=-50 mA 0 IE = ie = 0; VCB =-10 V ; f = 1 MHz IC = 10 mA; VCE = - 2 0 V ; f = 100 MHz
mV pF MHz
Note 1. Pulse test: tp 300 s; 0.02. 2. hFE: Q Gade: 120~270 R Gade: 180~390
RATING CHARACTERISTIC CURVES ( 2SB1197KPT )
Fig.1 DC Current gain vs. collector current
1000 COLLECTOR SATURATION VOLTAGE: VCE (sat) mV
TA=25OC
Fig.2 Collector-emittersaturation voltage vs. collector current
-1000
TA=25OC
DC CURRENT GAIN: hFE
100
VCE=-3V -2V -1V
-100
IC/IB=50 20 10
10
-10
1 -1m
-10m
-100m
-1
-1 -1m
-10m
-100m
-1
COLLECTOR CURRENT: IC (A)
COLLECTOR CURRENT: IC (A)
Fig.3 Gain bandwidthproduct vs. emitter current
TRANSITION FREQUENCY: fT (MHz)
TA=25OC VCE=-5V
Fig.4 Collector output capacitance
COLLECTOR OUTPUT CAPACITAQNCETAGE: CCB pF 1000
1000
TA=25OC f=1MHz IE=0A
100
100
10
10
1 -1m
-10m
-100m
-1
1 -1m
-10m
-100m
-1
EMITTER CURRENT: IE (A)
COLLECTOR TO BASE VOLATGE: VCB (V)
RATING CHARACTERISTIC CURVES ( 2SB1197KPT )
Fig.5 Grounded emittterpropgation characteristics
-1000
TA=25OC VCE=6V
Fig.6 Grounded emitter output characteristics
-200
-1.0mA
TA=25OC
-0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA
COLLOCTOR CURRENT : IC (mA)
-100
COLLECTOR CURRENT: IC (mA)
-100
-10
-0.3mA -0.2mA
-0.1mA IB=0mA
-1 0 -0.4 -0.8 -1.2 -1.6 BASE TO EMITTER VOLTAGE: VBE (V)
0 -0 -10
-20
COLLECTOR TO EMITTER VOLTAGE: VCE (V)
Fig.7 Grounded emitter output characteristics
-500
-20mA -18mA -16mA -14mA
-12mA -10mA -8mA -6mA
COLLECTOR CURRENT: IC (mA)
-400
-300
-4mA
-200
IB=-2mA
-100
TA=25OC
0 -0 -0.5 -1.0 COLLECTOR TO EMITTER VOLTAGE: VCE (V)

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